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By P. Chu

ISBN-10: 9533070862

ISBN-13: 9789533070865

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Extra resources for Advances in Solid State Circuits Technologies

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R. G. Carvajal R. ; Lopez-Martin A. & Carlosena A. (2004). A novel low-voltage low-power class-AB linear transconductor, IEEE Proceedings of International Sympoisum of Circuits and Systems, Vol. 1, pp. 725-728, ISBN 0-7803-8251-X, Vancouver, British Columbia, Canada, May 2004, Institute of Electrical and Electronics Engineers, Piscataway Lee S. ; Park S. B. & Lee K. R. (1994). New CMOS triode transconductor, Electronics Letters, Vol. 30, No. 12, (June 1994) pp. 946-948, ISSN 0013-5194 Leuciuc A.

315-317, ISSN 0018-9200 Zeki A. (1999). Low-voltage CMOS triode transconductor with wide-range and linear tunability, Electronics Letters, Vol. 35, No. 20, (Sept. 1999) pp. 1685-1686, ISSN 00135194 3 A Dynamically Reconfigurable Device Minoru Watanabe Shizuoka University, Japan 1. Introduction To the present day, the performance of microprocessors has progressed dramatically. Recently, almost all computer systems use reduced instruction set computer (RISC) architectures. However, about 30 years ago, complex instruction set computer (CISC) architectures were widely used for almost all computer systems.

4. VLSI design with 51,272 gates This section presents a description of the design of a 51,272 gate DORGA-VLSI. 35 μm standard complementarymetal oxide semiconductor (CMOS) process. The basic functionality of the DORGA-VLSI is fundamentally identical to that of currently available field programmable gate arrays (FPGAs). The DORGA-VLSI takes an island-style gate array or a fine-grain gate array. 1 Photodoide cell design Always, the depletion depth of a photodiode between an N-well and a P-substrate is deeper than that of a photodiode between an N-diffusion and a P-substrate.

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Advances in Solid State Circuits Technologies by P. Chu

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